Hao Zhang

Publication Activity (10 Years)

Years Active: 2022-2023
Publications (10 Years): 10

Top Topics

Metal Organic Framework

Top Venues

Nanomaterials (Basel, Switzerland)

This page only lists publications with an associated author ORCID identifier.

Publications

Dong Wang, Hongxia Liu, Hao Zhang, Ming Cai, Jinfu Lin
Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect Transistor. Micromachines 14 (3) (2023)
Cong Yan, Kun Yang, Hao Zhang, YaoLin Chen, Hong-Xia Liu
High performance self-powered photodetector based on van der Waals heterojunction. Nanotechnology (2023)
Chen Chong, Hongxia Liu, Shougang Du, Shulong Wang, Hao Zhang
Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET. Nanomaterials (Basel, Switzerland) 13 (3) (2023)
Dong Wang, Hongxia Liu, Hao Zhang, Ming Cai, Jinfu Lin
Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect Transistor. Micromachines 14 (3) (2023)
Chen Chong, Hongxia Liu, Shougang Du, Shulong Wang, Hao Zhang
Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET. Nanomaterials (Basel, Switzerland) 13 (3) (2023)
Dong Wang, Hongxia Liu, Hao Zhang, Ming Cai, Jinfu Lin
Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect Transistor. Micromachines 14 (3) (2023)
Chen Chong, Hongxia Liu, Shougang Du, Shulong Wang, Hao Zhang
Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET. Nanomaterials (Basel, Switzerland) 13 (3) (2023)
Hao Zhang, Shupeng Chen, Hongxia Liu, Shulong Wang, Dong Wang, Xiaoyang Fan, Chen Chong, Chenyu Yin, Tianzhi Gao
Polarization Gradient Effect of Negative Capacitance LTFET. Micromachines 13 (3) (2022)
Boyang Ma, Shupeng Chen, Shulong Wang, Tao Han, Hao Zhang, Chenyu Yin, Yaolin Chen, Hongxia Liu
A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect. Micromachines 13 (9) (2022)
Shupeng Chen, Shulong Wang, Hongxia Liu, Tao Han, Hao Zhang
A high performance trench gate tunneling field effect transistor based on quasi-broken gap energy band alignment heterojunction. Nanotechnology 33 (22) (2022)