Hsuan-Ling Kao

Publication Activity (10 Years)

Years Active: 2021-2022
Publications (10 Years): 7

Top Topics

Room Temperature

Perovskite Solar Cells

Energy Transfer

Top Venues

Materials (Basel, Switzerland)

This page only lists publications with an associated author ORCID identifier.

Publications

Chun-Bing Chen, Hsuan-Ling Kao, Li-Chun Chang, Yi-Chen Lin, Yung-Yu Chen, Wen-Hung Chung, Hsien-Chin Chiu
Wound-Dressing-Based Antenna Inkjet-Printed Using Nanosilver Ink for Wireless Medical Monitoring. Micromachines 13 (9) (2022)
Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Min-Hung Shih, Hsien-Chin Chiu, Hsuan-Ling Kao, Xinke Liu
Improved I on /I off Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al 0.5 GaN Etch-Stop Layer. Materials (Basel, Switzerland) 15 (10) (2022)
Chia-Hao Liu, Chong-Rong Huang, Hsiang-Chun Wang, Yi-Jie Kang, Hsien-Chin Chiu, Hsuan-Ling Kao, Kuo-Hsiung Chu, Hao-Chung Kuo, Chih-Tien Chen, Kuo-Jen Chang
Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. Micromachines 13 (9) (2022)
Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Xinke Liu
Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate. Micromachines 13 (5) (2022)
Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Si-Wen Chen
High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate. Micromachines 12 (5) (2021)
Chong-Rong Huang, Hsien-Chin Chiu, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen, Kuo-Jen Chang
Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates. Membranes 11 (11) (2021)
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien
Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator. Membranes 11 (10) (2021)