Justinas Jorudas

Publication Activity (10 Years)

Years Active: 2020-2024
Publications (10 Years): 7

Top Topics

Walled Carbon Nanotubes

Transcranial Magnetic Stimulation

Top Venues

Materials (Basel, Switzerland)

Nanomaterials (Basel, Switzerland)

This page only lists publications with an associated author ORCID identifier.

Publications

Justinas Jorudas, Hamza Rehman, Maria Cojocari, Daniil Pashnev, Andzej Urbanovic, Irmantas Kašalynas, Benedetta Bertoni, Leonardo Vicarelli, Alessandro Pitanti, Sergei Malykhin, Yuri Svirko, Polina P Kuzhir, Georgy Fedorov
Ultra-broadband absorbance of nanometer-thin pyrolyzed-carbon film on silicon nitride membrane. Nanotechnology (2024)
Justinas Jorudas, Hamza Rehman, Maria Cojocari, Daniil Pashnev, Andrzej Urbanowicz, Irmantas Kašalynas, Benedetta Bertoni, Leonardo Vicarelli, Alessandro Pitanti, Sergei Malykhin, Yuri Svirko, Polina P Kuzhir, Georgy Fedorov
Ultra-broadband absorbance of nanometer-thin pyrolyzed-carbon film on silicon nitride membrane. Nanotechnology 35 (30) (2024)
Justinas Jorudas, Daniil Pashnev, Irmantas Kašalynas, Ilja Ignatjev, Gediminas Niaura, Algirdas Selskis, Vladimir Astachov, Natalia Alexeeva
Green Removal of DUV-Polarity-Modified PMMA for Wet Transfer of CVD Graphene. Nanomaterials (Basel, Switzerland) 12 (22) (2022)
Roman M Balagula, Liudvikas Subačius, Justinas Jorudas, Vytautas Janonis, Pawel Prystawko, Mikolaj Grabowski, Irmantas Kašalynas
High-Frequency and High-Power Performance of n -Type GaN Epilayers with Low Electron Density Grown on Native Substrate. Materials (Basel, Switzerland) 15 (6) (2022)
Justinas Jorudas, Paweł Prystawko, Artūr Šimukovič, Ramūnas Aleksiejūnas, Jūras Mickevičius, Marcin Kryśko, Paweł Piotr Michałowski, Irmantas Kašalynas
Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures. Materials (Basel, Switzerland) 15 (3) (2022)
Simonas Indrišiūnas, Evaldas Svirplys, Justinas Jorudas, Irmantas Kašalynas
Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside. Micromachines 12 (4) (2021)
Justinas Jorudas, Artūr Šimukovič, Maksym Dub, Maciej Sakowicz, Pawel Prystawko, Simonas Indrišiūnas, Vitalij Kovalevskij, Sergey Rumyantsev, Wojciech Knap, Irmantas Kašalynas
AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics. Micromachines 11 (12) (2020)