Kosuke Nagashio (K Nagashio)

Researcher Name Resolver ID ORCID

Publication Activity (10 Years)

Years Active: 2018-2024
Publications (10 Years): 26

Top Topics

Carbon Nanotubes

Room Temperature

Top Venues

ACS applied materials & interfaces

Nature communications

Nanoscale advances

This page only lists publications with an associated author ORCID identifier.

Publications

Nan Fang, Y R Chang, Shun Fujii, D Yamashita, Mina Maruyama, Y Gao, Chee Fai Fong, D Kozawa, Keigo Otsuka, Kosuke Nagashio, Susumu Okada, Yuichiro K Kato
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures. Nature communications 15 (1) (2024)
Tomohiro Fukui, Tomonori Nishimura, Yasumitsu Miyata, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio
Single-Gate MoS 2 Tunnel FET with a Thickness-Modulated Homojunction. ACS applied materials & interfaces 16 (7) (2024)
Nan Fang, Y R Chang, Shun Fujii, D Yamashita, Mina Maruyama, Y Gao, Chee Fai Fong, D Kozawa, Keigo Otsuka, Kosuke Nagashio, Susumu Okada, Yuichiro K Kato
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures. Nature communications 15 (1) (2024)
Nan Fang, Y R Chang, Shun Fujii, D Yamashita, Mina Maruyama, Y Gao, Chee Fai Fong, D Kozawa, Keigo Otsuka, Kosuke Nagashio, Susumu Okada, Yuichiro K Kato
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures. Nature communications 15 (1) (2024)
Tomohiro Fukui, Tomonori Nishimura, Yasumitsu Miyata, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio
Single-Gate MoS 2 Tunnel FET with a Thickness-Modulated Homojunction. ACS applied materials & interfaces (2024)
Nan Fang, Y R Chang, Shun Fujii, D Yamashita, Mina Maruyama, Y Gao, Chee Fai Fong, D Kozawa, Keigo Otsuka, Kosuke Nagashio, Susumu Okada, Yuichiro K Kato
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures. Nature communications 15 (1) (2024)
Hiroto Ogura, Seiya Kawasaki, Zheng Liu, Takahiko Endo, Mina Maruyama, Yanlin Gao, Yusuke Nakanishi, Hong En Lim, Kazuhiro Yanagi, Toshifumi Irisawa, Keiji Ueno, Susumu Okada, Kosuke Nagashio, Yasumitsu Miyata
Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics. ACS nano (2023)
Yih-Ren Chang, Ryo Nanae, Satsuki Kitamura, Tomonori Nishimura, Haonan Wang, Yubei Xiang, Keisuke Shinokita, Kazunari Matsuda, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio
Shift Current Photovoltaics based on A Noncentrosymmetric Phase in in-plane Ferroelectric SnS. Advanced materials (Deerfield Beach, Fla.) (2023)
Nan Fang, Y R Chang, D Yamashita, Shun Fujii, Mina Maruyama, Y Gao, Chee Fai Fong, Keigo Otsuka, Kosuke Nagashio, Susumu Okada, Yuichiro K Kato
Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes. Nature communications 14 (1) (2023)
Ryoichi Kato, Haruki Uchiyama, Tomonori Nishimura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Edward Chen, Kosuke Nagashio
p-Type Conversion of WS 2 and WSe 2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors. ACS applied materials & interfaces (2023)
Shuhong Li, Tomonori Nishimura, Mina Maruyama, Susumu Okada, Kosuke Nagashio
Experimental verification of SO 2 and S desorption contributing to defect formation in MoS 2 by thermal desorption spectroscopy. Nanoscale advances 5 (2) (2022)
Hiroki Kinoshita, Susumu Okada, Yasumitsu Miyata, Kazunari Matsuda, Mikito Koshino, Kosei Ueno, Kosuke Nagashio
Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation. Science and technology of advanced materials 23 (1) (2022)
Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio
Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h -BN. ACS applied materials & interfaces 14 (22) (2022)
Shuhong Li, Tomonori Nishimura, Mina Maruyama, Susumu Okada, Kosuke Nagashio
Experimental verification of SO 2 and S desorption contributing to defect formation in MoS 2 by thermal desorption spectroscopy. Nanoscale advances 5 (2) (2022)
Yih-Ren Chang, Tomonori Nishimura, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio
Performance Enhancement of SnS/ h -BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method. ACS applied materials & interfaces 14 (17) (2022)
Supawan Ngamprapawat, Tomonori Nishimura, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio
Current Injection into Single-Crystalline Carbon-Doped h -BN toward Electronic and Optoelectronic Applications. ACS applied materials & interfaces 14 (22) (2022)
Yih-Ren Chang, Tomonori Nishimura, Kosuke Nagashio
Thermodynamic Perspective on the Oxidation of Layered Materials and Surface Oxide Amelioration in 2D Devices. ACS applied materials & interfaces 13 (36) (2021)
Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio
Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory. ACS nano 15 (4) (2021)
Pablo Solís-Fernández, Yuri Terao, Kenji Kawahara, Wataru Nishiyama, Teerayut Uwanno, Yung-Chang Lin, Keisuke Yamamoto, Hiroshi Nakashima, Kosuke Nagashio, Hiroki Hibino, Kazu Suenaga, Hiroki Kinoshita
Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene. ACS nano 14 (6) (2020)
Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio
Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage. Small (Weinheim an der Bergstrasse, Germany) 16 (47) (2020)
Keigo Nakamura, Naoka Nagamura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio
All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality. ACS applied materials & interfaces 12 (46) (2020)
Naoki Higashitarumizu, Hayami Kawamoto, Chien-Ju Lee, Bo-Han Lin, Fu-Hsien Chu, Itsuki Yonemori, Tomonori Nishimura, Katsunori Wakabayashi, Wen-Hao Chang, Kosuke Nagashio
Purely in-plane ferroelectricity in monolayer SnS at room temperature. Nature communications 11 (1) (2020)
Teerayut Uwanno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio
Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors. ACS applied materials & interfaces 10 (34) (2018)
Nan Fang, Kosuke Nagashio
Accumulation-Mode Two-Dimensional Field-Effect Transistor: Operation Mechanism and Thickness Scaling Rule. ACS applied materials & interfaces 10 (38) (2018)
Yoshiaki Hattori, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio
Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface. ACS applied materials & interfaces 10 (14) (2018)
Ryota Matsuoka, Ryojun Toyoda, Ryo Shiotsuki, Naoya Fukui, Keisuke Wada, Hiroaki Maeda, Ryota Sakamoto, Sono Sasaki, Hiroyasu Masunaga, Kosuke Nagashio, Hiroshi Nishihara
Expansion of the Graphdiyne Family: A Triphenylene-Cored Analogue. ACS applied materials & interfaces 11 (3) (2018)