Kuan-Wei Lee

Publication Activity (10 Years)

Years Active: 2021-2022
Publications (10 Years): 7

Top Topics

Transition Metal

Highly Efficient

Top Venues

Materials (Basel, Switzerland)

Molecules (Basel, Switzerland)

This page only lists publications with an associated author ORCID identifier.

Publications

Soumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee, Yeong-Her Wang
Remarkable Reduction in I G with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al 2 O 3 /SiO 2 Stack Layer AlGaN/GaN MOS-HEMT. Materials (Basel, Switzerland) 15 (24) (2022)
Soumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee, Yeong-Her Wang
Remarkable Reduction in I G with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al 2 O 3 /SiO 2 Stack Layer AlGaN/GaN MOS-HEMT. Materials (Basel, Switzerland) 15 (24) (2022)
Cheng-Yu Huang, Soumen Mazumder, Pu-Chou Lin, Kuan-Wei Lee, Yeong-Her Wang
Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al 2 O 3 /ZrO 2 Stacked Gate Dielectrics. Materials (Basel, Switzerland) 15 (19) (2022)
Soumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee, Yeong-Her Wang
Remarkable Reduction in I G with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al 2 O 3 /SiO 2 Stack Layer AlGaN/GaN MOS-HEMT. Materials (Basel, Switzerland) 15 (24) (2022)
Soumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee, Yeong-Her Wang
Remarkable Reduction in I G with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al 2 O 3 /SiO 2 Stack Layer AlGaN/GaN MOS-HEMT. Materials (Basel, Switzerland) 15 (24) (2022)
Pao-Hsun Huang, Chi-Wei Wang, Shui-Yang Lien, Kuan-Wei Lee, Na-Fu Wang, Chien-Jung Huang
Investigation of the Stability of Methylammonium Lead Iodide (MAPbI3) Film Doped with Lead Cesium Triiodide (CsPbI3) Quantum Dots under an Oxygen Plasma Atmosphere. Molecules (Basel, Switzerland) 26 (9) (2021)
Yuan-Ming Chen, Hsien-Cheng Lin, Kuan-Wei Lee, Yeong-Her Wang
Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator. Materials (Basel, Switzerland) 14 (4) (2021)