Seung-Eon Ahn

Publication Activity (10 Years)

Years Active: 2022-2023
Publications (10 Years): 7

Top Topics

Machine Learning

Anterior Cruciate Ligament Reconstruction

Depressive Symptoms

Top Venues

Nanomaterials (Basel, Switzerland)

Materials (Basel, Switzerland)

This page only lists publications with an associated author ORCID identifier.

Publications

Wonwoo Kho, Hyunjoo Hwang, Jisoo Kim, Gyuil Park, Seung-Eon Ahn
Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures. Nanomaterials (Basel, Switzerland) 13 (3) (2023)
Wonwoo Kho, Hyunjoo Hwang, Jisoo Kim, Gyuil Park, Seung-Eon Ahn
Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures. Nanomaterials (Basel, Switzerland) 13 (3) (2023)
Jisu Byun, Wonwoo Kho, Hyunjoo Hwang, Yoomi Kang, Minjeong Kang, Taewan Noh, Hoseong Kim, Jimin Lee, Hyo-Bae Kim, Ji-Hoon Ahn, Seung-Eon Ahn
Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System Applications. Nanomaterials (Basel, Switzerland) 13 (19) (2023)
Wonwoo Kho, Gyuil Park, Jisoo Kim, Hyunjoo Hwang, Jisu Byun, Yoomi Kang, Minjeong Kang, Seung-Eon Ahn
Synaptic Characteristic of Hafnia-Based Ferroelectric Tunnel Junction Device for Neuromorphic Computing Application. Nanomaterials (Basel, Switzerland) 13 (1) (2022)
Wonwoo Kho, Gyuil Park, Jisoo Kim, Hyunjoo Hwang, Jisu Byun, Yoomi Kang, Minjeong Kang, Seung-Eon Ahn
Synaptic Characteristic of Hafnia-Based Ferroelectric Tunnel Junction Device for Neuromorphic Computing Application. Nanomaterials (Basel, Switzerland) 13 (1) (2022)
Wonwoo Kho, Gyuil Park, Jisoo Kim, Hyunjoo Hwang, Jisu Byun, Yoomi Kang, Minjeong Kang, Seung-Eon Ahn
Synaptic Characteristic of Hafnia-Based Ferroelectric Tunnel Junction Device for Neuromorphic Computing Application. Nanomaterials (Basel, Switzerland) 13 (1) (2022)
Yoseop Lee, Sungmun Song, Woori Ham, Seung-Eon Ahn
Si-Doped HfO 2 -Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications. Materials (Basel, Switzerland) 15 (6) (2022)