Thierry Baron

Scopus Author ID ORCID

Publication Activity (10 Years)

Years Active: 2020-2023
Publications (10 Years): 6

Top Venues

Nanomaterials (Basel, Switzerland)

Sensors (Basel, Switzerland)

ACS omega

Universite Joseph Fourier UFR de Physique (PHD)

This page only lists publications with an associated author ORCID identifier.

Education History

Universite Joseph Fourier UFR de Physique

France

PHD

Publications

Jules Tillement, Cyril Cervera, Jacques Baylet, Christophe Jany, François Nardelli, Thomas Di Rito, Sylvain Georges, Gabriel Mugny, Olivier Saxod, Olivier Gravrand, Thierry Baron, François Roy, Frédéric Boeuf
Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing. Sensors (Basel, Switzerland) 23 (22) (2023)
Florian Requena, Samuel Ahoulou, Nicolas Barbot, Darine Kaddour, Jean-Marie Nedelec, Thierry Baron, Etienne Perret
Towards Wireless Detection of Surface Modification of Silicon Nanowires by an RF Approach. Nanomaterials (Basel, Switzerland) 12 (23) (2022)
Aurélie Lecestre, Mickael Martin, Filadelfo Cristiano, Thierry Baron, Guilhem Larrieu
Large-Scale Monolithic Fabrication of III-V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate. ACS omega 7 (7) (2022)
Florian Requena, Samuel Ahoulou, Nicolas Barbot, Darine Kaddour, Jean-Marie Nedelec, Thierry Baron, Etienne Perret
Towards Wireless Detection of Surface Modification of Silicon Nanowires by an RF Approach. Nanomaterials (Basel, Switzerland) 12 (23) (2022)
Florian Requena, Samuel Ahoulou, Nicolas Barbot, Darine Kaddour, Jean-Marie Nedelec, Thierry Baron, Etienne Perret
Towards Wireless Detection of Surface Modification of Silicon Nanowires by an RF Approach. Nanomaterials (Basel, Switzerland) 12 (23) (2022)
Oumaima Abouzaid, Hussein Mehdi, Mickael Martin, Jérémy Moeyaert, Bassem Salem, Sylvain David, Abdelkader Souifi, Nicolas Chauvin, Jean-Michel Hartmann, Bouraoui Ilahi, Denis Morris, Ali Ahaitouf, Abdelaziz Ahaitouf, Thierry Baron
O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate. Nanomaterials (Basel, Switzerland) 10 (12) (2020)

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Publication Activity (10 Years)

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Thierry Baron