Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM-EDS Using Registration and Cell Averaging Techniques.
Min-Chul KangFarhan IslamJiaqiang YanDavid VakninRobert J McQueeneyPing LuLin ZhouPublished in: Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada (2024)
Magnetic dopants in three-dimensional topological insulators (TIs) offer a promising avenue for realizing the quantum anomalous Hall effect (QAHE) without the necessity for an external magnetic field. Understanding the relationship between site occupancy of magnetic dopant elements and their effect on macroscopic property is crucial for controlling the QAHE. By combining atomic-scale energy-dispersive X-ray spectroscopy (EDS) maps obtained by aberration-corrected scanning transmission electron microscopy (AC-STEM) and novel data processing methodologies, including semi-automatic lattice averaging and frame registration, we have determined the substitutional sites of Mn atoms within the 1.2% Mn-doped Sb2Te3 crystal. More importantly, the methodology developed in this study extends beyond Mn-doped Sb2Te3 to other quantum materials, traditional semiconductors, and even electron irradiation sensitive materials.
Keyphrases
- electron microscopy
- metal organic framework
- quantum dots
- molecular dynamics
- high resolution
- room temperature
- molecularly imprinted
- transition metal
- highly efficient
- electronic health record
- single cell
- machine learning
- radiation therapy
- deep learning
- mass spectrometry
- stem cells
- magnetic resonance imaging
- magnetic resonance
- computed tomography
- bone marrow
- monte carlo
- dual energy
- liquid chromatography