Oxygen-Induced Barrier Lowering for High-Performance Organic Field-Effect Transistors.

Organic field-effect transistors (OFETs) have the advantages of low-cost, large-area processing and could be utilized in a variety of emerging applications. However, the generally large contact resistance ( R c ) limits the integration and miniaturization of OFETs. The R c is difficult to reduce due to an incompatibility between obtaining strong orbit coupling and the barrier height reduction. In this study, we developed an oxygen-induced barrier lowering strategy by introducing oxygen (O 2 ) into the nanointerface between the electrodes and organic semiconductors layer and achieved an ultralow channel width-normalized R c ( R c · W ) of 89.8 Ω·cm and a high mobility of 11.32 cm 2 V -1 s -1 . This work demonstrates that O 2 adsorbed at the nanointerface of metal-semiconductor contact can significantly reduce the R c from both experiments and theoretical simulations and provides guidance for the construction of high-performance OFETs, which is conducive to the integration and miniaturization of OFETs.