Flexible, Transparent And Wafer-scale Artificial Synapse Array Based on TiO x /Ti 3 C 2 T x Film for Neuromorphic Computing.

High-density neuromorphic computing memristor array based on two-dimensional (2D) materials paves the way for next-generation information-processing components and in memory computing systems. However, the traditional two-dimensional materials-based memristor devices are suffered from poor flexibility and opacity, which hinders the application of memristors in flexible electronics. Here, a flexible artificial synapse array based on TiO x /Ti 3 C 2 T x film is fabricated by convenient and energy-efficient solution-processed technique, which realizes high transmittance (∼90%) and oxidation resistance (>30 days). The TiO x /Ti 3 C 2 T x memristor shows low device-to-device variability, long memory retention and endurance, high ON/OFF ratio and fundamental synaptic behavior. Furthermore, satisfactory flexibility (R = 1.0 mm) and mechanical endurance (10 4 bending cycles) of the TiO x /Ti 3 C 2 T x memristor is achieved, which is superior to other film memristors prepared by chemical vapor deposition. In addition, high-precision (>96.44%) MNIST handwritten digits recognition classification simulation indicates that TiO x /Ti 3 C 2 T x artificial synapse array holds promise to future neuromorphic computing applications, and provides excellent high-density neuron circuits for new flexible intelligent electronic equipment. This article is protected by copyright. All rights reserved.