Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon.
Alexander M JakobSimon G RobsonHannes R FirgauVincent MourikVivien SchmittDanielle HolmesMatthias PosseltEdwin L H MayesDaniel SpemannJeffrey C McCallumAndrea MorelloDavid N JamiesonPublished in: Advanced materials (Deerfield Beach, Fla.) (2024)
Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here multiple strategies are demonstrated and integrated to manufacture scale-up donor-based quantum computers. 31 PF 2 molecule implants are used to triple the placement certainty compared to 31 P ions, while attaining 99.99% confidence in detecting the implant. Similar confidence is retained by implanting heavier atoms such as 123 Sb and 209 Bi, which represent high-dimensional qudits for quantum information processing, while Sb 2 molecules enable deterministic formation of closely-spaced qudits. The deterministic formation of regular arrays of donor atoms with 300 nm spacing is demonstrated, using step-and-repeat implantation through a nano aperture. These methods cover the full gamut of technological requirements for the construction of donor-based quantum computers in silicon.