Suppressing Buried Interface Nonradiative Recombination Losses Towards High-efficiency Antimony Triselenide Solar Cells.

Antimony triselenide (Sb 2 Se 3 ) has possessed excellent optoelectronic properties and has gained interest as a light-harvesting material for photovoltaic technology over the past several years. However, the severe interfacial and bulk recombination obviously contribute to significant carrier transport loss thus leading to the deterioration of power conversion efficiency (PCE). In this work, we synergistically employ buried interface and heterojunction engineering to regulate the film growth kinetic and optimize the band alignment. Through this approach, the orientation of the precursor films is successfully controlled, promoting the preferred orientational growth of the (hk1) of the Sb 2 Se 3 films. Besides, interfacial trap-assisted non-radiative recombination loss and heterojunction band alignment are successfully minimized and optimized. As a result, the champion device presents a PCE of 9.24% with short-circuit density (J SC ) and fill factor (FF) of 29.47 mA/cm 2 and 63.65%, respectively, representing the highest efficiency in sputtered-derived Sb 2 Se 3 solar cells. This work provides an insightful prescription for fabricating high-quality Sb 2 Se 3 thin film and enhancing the performance of Sb 2 Se 3 solar cells. This article is protected by copyright. All rights reserved.