The sp 3 Defect Decreases Charge Carrier Lifetime in (8,3) Single-Walled Carbon Nanotubes.

A recent experimental approach introduces sp 3 defects into single-walled carbon nanotubes (SWNTs) through controlled functionalization with guanine, resulting in a decrease in charge carrier lifetime. However, the physical mechanism behind this phenomenon remains unclear. We employ nonadiabatic molecular dynamics to systematically model the nonradiative recombination process of electron-hole pairs in SWNTs with sp 3 defects generated by a guanine molecule. We demonstrate that the introduction of sp 3 defects creates an overlapping channel between the highest occupied (HOMO) and lowest unoccupied molecular orbital (LUMO), significantly enhancing the nonadiabatic (NA) coupling and leading to a 4.7-fold acceleration in charge carrier recombination compared to defect-free SWNTs. The charge carrier recombination slows significantly at a lower temperature (50 K) due to the weakening of the NA coupling. Our results rationalize the accelerated recombination of charge carriers in SWNTs with sp 3 defects in experiments and contribute to a deeper understanding of the carrier dynamics in SWNTs.