Studies of Performance of Cs 2 TiI 6-X Br X (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer.

The present research work represents the numerical study of the device performance of a lead-free Cs 2 TiI 6-X Br X -based mixed halide perovskite solar cell (PSC), where x = 1 to 5. The open circuit voltage (V OC ) and short circuit current (J SC ) in a generic TCO/electron transport layer (ETL)/absorbing layer/hole transfer layer (HTL) structure are the key parameters for analyzing the device performance. The entire simulation was conducted by a SCAPS-1D (solar cell capacitance simulator- one dimensional) simulator. An alternative FTO/CdS/Cs 2 TiI 6-X Br X /CuSCN/Ag solar cell architecture has been used and resulted in an optimized absorbing layer thickness at 0.5 µm thickness for the Cs 2 TiBr 6 , Cs 2 TiI 1 Br 5 , Cs 2 TiI 2 Br 4 , Cs 2 TiI 3 Br 3 and Cs 2 TiI 4 Br 2 absorbing materials and at 1.0 µm and 0.4 µm thickness for the Cs 2 TiI 5 Br 1 and Cs 2 TiI 6 absorbing materials. The device temperature was optimized at 40 °C for the Cs 2 TiBr 6 , Cs 2 TiI 1 Br 5 and Cs 2 TiI 2 Br 4 absorbing layers and at 20 °C for the Cs 2 TiI 3 Br 3 , Cs 2 TiI 4 Br 2 , Cs 2 TiI 5 Br 1 and Cs 2 TiI 6 absorbing layers. The defect density was optimized at 10 10 (cm -3 ) for all the active layers.