Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors.

Semiconducting carbon nanotubes (CNTs) have been considered as the most promising channel material to construct ultra-scaled field-effect transistors (FETs), but the perfect sp2 C-C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method was developed by filling CNTs with one-dimensional (1D) halide perovskites to form a coaxial heterojunction, which enables a stable n-type field-effect transistor (CNT-FET) for constructing complementary metal-oxide-semiconductor (CMOS) electronics. Most importantly, a quasi-broken gap (BG) heterojunction tunnel field-effect transistor (TFET) was first demonstrated based on an individual partial-filling CsPbBr3/CNT and exhibited a subthreshold swing of 35 mV dec-1 with a high on-state current of up to 4.9 μA/tube and an on/off current ratio of up to 105 at room temperature. The quasi-BG TFET based on the CsPbBr3/CNT coaxial heterojunction paves the way for constructing high-performance and ultralow power consumption ICs. This article is protected by copyright. All rights reserved.