Fabrication and Characterization of In 0.53 Ga 0.47 As/InAs/In 0.53 Ga 0.47 As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate.

In this work, we successfully demonstrated In 0.53 Ga 0.47 As/InAs/In 0.53 Ga 0.47 As composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. The fabricated mHEMTs with a 100 nm gate length exhibited excellent DC and logic characteristics such as V T = -0.13 V, g m,max = 949 mS/mm, subthreshold swing (SS) = 84 mV/dec, drain-induced barrier lowering (DIBL) = 89 mV/V, and I on /I off ratio = 9.8 × 10 3 at a drain-source voltage ( V DS ) = 0.5 V. In addition, the device exhibited excellent high-frequency characteristics, such as f T /f max = 261/304 GHz for the measured result and well-matched modeled f T /f max = 258/309 GHz at V DS = 0.5 V, which is less power consumption compared to other material systems. These high-frequency characteristics are a well-balanced demonstration of f T and f max in the mHEMT structure on a GaAs substrate.