Graphene spin valve for spin logic devices.
Pramod GhisingChandan BiswasYoung Hee LeePublished in: Advanced materials (Deerfield Beach, Fla.) (2023)
An alternative to charge-based electronics identifies the spin degree of freedom for information communication and processing. The long spin diffusion length in graphene at room temperature demonstrates its ability for highly scalable spintronics. The development of graphene spin valve (SV) has inspired spin devices in graphene including spin field-effect transistors and spin majority logic gates. A comprehensive picture of spin transport in graphene SVs is required for further development of spin logic. This Review examines the advances in graphene SVs and their role in the development of spin logic devices. We discuss different transport and scattering mechanisms in charge and spin. Furthermore, we compare the on/off switching energy between graphene SVs and charge-based FETs to highlight their prospect for low-power devices. We finally outline the challenges and perspectives that need to be addressed for the future development of spin logic devices. This article is protected by copyright. All rights reserved.