Promising ultra-short channel transistors based on OM 2 S (M = Ga, In) monolayers for high performance and low power consumption.

It is hoped that two-dimensional (2D) semiconductors overcome the short channel effect and continue Moore's law. However, 2D material-based ultra-short channel devices still face the challenge of simultaneously achieving high-performance (HP) and low-power (LP) consumption. Here, we theoretically designed monolayer OM 2 S (M = Ga, In)-based metal-oxide-semiconductor field-effect transistors (MOSFETs), considering the gate length from 1 to 5 nm, doping concentration and underlap structure. We found that in HP (LP) applications, the on-state current exceeds 1000 (500) μA μm -1 under a 1 nm (2 nm) gate length, surpassing the needs of the International Technology Roadmap for Semiconductors (ITRS) in 2028. The subthreshold swing is close to the Boltzmann tyranny (60 mV dec -1 ) even as the gate length shrinks to 2 nm. The energy-delay product is two orders lower than 1.02 × 10 -28 J s μm -1 , indicating extraordinary high-speed manipulation and low-energy expending. Therefore, monolayer OM 2 S has great application in ultra-short scale devices with HP and LP consumption, and can be taken as a candidate to extend Moore's Law.