Electrically Driven Sub-Micron Light-Emitting Diode Arrays Using Maskless and Etching-Free Pixelation.

For the decades, group III-nitride-based light-emitting diodes (LEDs) are regarded as a light emitting source for future displays in virtue of their novel properties such as high efficiency, brightness and stability. Nevertheless, realization of high pixel density displays is still challenging due to limitations on pixelation methods. In this study, a maskless and etching-free micro-LEDs (μLEDs) pixelation method is developed via tailored He focused ion beam (FIB) irradiation technique, and electrically-driven sub-micrometer-scale μLED pixel arrays are demonstrated. It is confirmed that optical quenching and electrical isolation effects are simultaneously induced at a certain ion dose (∼10 14 ions/cm 2 ) without surface damage. Furthermore, highly efficient μLED pixel arrays at sub-micrometer-scale (square pixel, 0.5 μm side length) are fabricated. Their pixelation and brightness are verified by various optical measurements such as cathodo-, photo- and electro-luminescence. We expect that the FIB-induced optical quenching and electrical isolation method can pioneer a new defect engineering technology not only for μLED fabrication, but also for sub-micron-scale optoelectronic devices. This article is protected by copyright. All rights reserved.