Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band.

Although two-dimensional (2D) materials have been widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, we report an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure, where the ferroelectric CuInP 2 S 6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550-nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, we demonstrate a fully memristive in-sensor RC system that can simultaneously sense, decode and learn messages transmitted by optical fibers. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge. This article is protected by copyright. All rights reserved.