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Study of β-Ga 2 O 3 Ceramics Synthesized under Powerful Electron Beam.

Abay B UsseinovZhakyp T KaripbayevJuris PuransAskhat B KakimovAizat BakytkyzyAmangeldy M ZhunusbekovTemirgali A KoketaiArtem L KozlovskiyYana SuchikovaAnatoli I Popov
Published in: Materials (Basel, Switzerland) (2023)
The synthesis of β-Ga 2 O 3 ceramic was achieved using high-energy electron beams for the first time. The irradiation of gallium oxide powder in a copper crucible using a 1.4 MeV electron beam resulted in a monolithic ceramic structure, eliminating powder particles and imperfections. The synthesized β-Ga 2 O 3 ceramic exhibited a close-to-ideal composition of O/Ga in a 3:2 ratio. X-ray diffraction analysis confirmed a monoclinic structure (space group C2/m) that matched the reference diagram before and after annealing. Photoluminescence spectra revealed multiple luminescence peaks at blue (~2.7 eV) and UV (3.3, 3.4, 3.8 eV) wavelengths for the synthesized ceramic and commercial crystals. Raman spectroscopy confirmed the bonding modes in the synthesized ceramic. The electron beam-assisted method offers a rapid and cost-effective approach for β-Ga 2 O 3 ceramic production without requiring additional equipment or complex manipulations. This method holds promise for fabricating refractory ceramics with high melting points, both doped and undoped.
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