Enhanced Efficiency of MAPbI₃ Perovskite Solar Cells with FAPbX₃ Perovskite Quantum Dots.

We describe a method to enhance power conversion efficiency (PCE) of MAPbI₃ perovskite solar cell by inserting a FAPbX₃ perovskite quantum dots (QD-FAPbX₃) layer. The MAPbI₃ and QD-FAPbX₃ layers were prepared using a simple, rapid spin-coating method in a nitrogen-filled glove box. The solar cell structure consists of ITO/PEDOT:PSS/MAPbI₃/QD-FAPbX₃/C60/Ag, where PEDOT:PSS, MAPbI₃, QD-FAPbX₃, and C60 were used as the hole transport layer, light-absorbing layer, absorption enhance layer, and electron transport layer, respectively. The MAPbI₃/QD-FAPbX₃ solar cells exhibit a PCE of 7.59%, an open circuit voltage (Voc) of 0.9 V, a short-circuit current density (Jsc) of 17.4 mA/cm², and a fill factor (FF) of 48.6%, respectively.