Influence of SiO 2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene.

The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% ( 0.5% G) is studied. Devices composed of monolayer 0.5% G, partially deposited on SiO 2 and h-BN were used for transport measurements. We find that the 0.5% G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO 2 for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.