Development of MEMS Process Compatible (Bi,Sb) 2 (Se,Te) 3 -Based Thin Films for Scalable Fabrication of Planar Micro-Thermoelectric Generators.

Bismuth telluride-based thin films have been investigated as the active material in flexible and micro thermoelectric generators (TEGs) for near room-temperature energy harvesting applications. The latter is a class of compact printed circuit board compatible devices conceptualized for operation at low-temperature gradients to generate power for wireless sensor nodes (WSNs), the fundamental units of the Internet-of-Things (IoT). CMOS and MEMS compatible micro-TEGs require thin films that can be integrated into the fabrication flow without compromising their thermoelectric properties. We present results on the thermoelectric properties of (Bi,Sb) 2 (Se,Te) 3 thin films deposited via thermal evaporation of ternary compound pellets on four-inch SiO 2 substrates at room temperature. Thin-film compositions and post-deposition annealing parameters are optimized to achieve power factors of 2.75 mW m -1 K -2 and 0.59 mW m -1 K -2 for p-type and n-type thin films. The measurement setup is optimized to characterize the thin-film properties accurately. Thin-film adhesion is further tested and optimized on several substrates. Successful lift-off of p-type and n-type thin films is completed on the same wafer to create thermocouple patterns as per the target device design proving compatibility with the standard MEMS fabrication process.