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Vertical-Tunnel Field-Effect Transistor Based on a Silicon-MoS2 Three-Dimensional-Two-Dimensional Heterostructure.

Gwang Hyuk ShinBondae KooHamin ParkYoungjun WooJae Eun LeeSung-Yool Choi
Published in: ACS applied materials & interfaces (2018)
We present a tunneling field-effect transistor based on a vertical heterostructure of highly p-doped silicon and n-type MoS2. The resulting p-n heterojunction shows a staggered band alignment in which the quantum mechanical band-to-band tunneling probability is enhanced. The device functions in both tunneling transistor and conventional transistor modes, depending on whether the p-n junction is forward or reverse biased, and exhibits a minimum subthreshold swing of 15 mV/dec, an average of 77 mV/dec for four decades of the drain current, a high on/off current ratio of approximately 107 at a drain voltage of 1 V, and fully suppressed ambipolar behavior. Furthermore, low-temperature electrical measurements demonstrated that both trap-assisted and band-to-band tunneling contribute to the drain current. The presence of traps was attributed to defects within the interfacial oxide between silicon and MoS2.
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