Investigation of Perovskite Solar Cells Using Guanidinium Doped MAPbI 3 Active Layer.

In this work, guanidinium (GA + ) was doped into methylammonium lead triiodide (MAPbI 3 ) perovskite film to fabricate perovskite solar cells (PSCs). To determine the optimal formulation of the resulting guanidinium-doped MAPbI 3 ((GA) x (MA) 1-x PbI 3 ) for the perovskite active layer in PSCs, the perovskite films with various GA + doping concentrations, annealing temperatures, and thicknesses were systematically modulated and studied. The experimental results demonstrated a 400-nm-thick (GA) x (MA) 1-x PbI 3 film, with 5% GA + doping and annealed at 90 °C for 20 min, provided optimal surface morphology and crystallinity. The PSCs configured with the optimal (GA) x (MA) 1-x PbI 3 perovskite active layer exhibited an open-circuit voltage of 0.891 V, a short-circuit current density of 24.21 mA/cm 2 , a fill factor of 73.1%, and a power conversion efficiency of 15.78%, respectively. Furthermore, the stability of PSCs featuring this optimized (GA) x (MA) 1-x PbI 3 perovskite active layer was significantly enhanced.