Macroscopic Versus Microscopic Schottky Barrier Determination at (Au/Pt)/Ge(100): Interfacial Local Modulation.
Andrea GerbiRenato BuzioCesar GonzálezNicola MancaDaniele MarrèSergio MarrasMirko PratoLloyd BellSergio Di MatteoFernando FloresPedro L de AndresPublished in: ACS applied materials & interfaces (2020)
Macroscopic current-voltage measurements and nanoscopic ballistic electron emission spectroscopy (BEES) have been used to probe the Schottky barrier height (SBH) at metal/Ge(100) junctions for two metal electrodes (Au and Pt) and different metallization methods, specifically, thermal-vapor and laser-vapor deposition. Analysis of macroscopic current-voltage characteristics indicates that a SBH of 0.61-0.63 eV controls rectification at room temperature. On the other hand, BEES measured at 80 K reveals the coexistence of two distinct barriers at the nanoscale, taking values in the ranges 0.61-0.64 and 0.70-0.74 eV for the cases studied. For each metal-semiconductor junction, the macroscopic measurement agrees well with the lower barrier found with BEES. Ab initio modeling of BEES spectra ascribes the two barriers to two different atomic registries between the metals and the Ge(100) surface, a significant relevant insight for next-generation highly miniaturized Ge-based devices.
Keyphrases
- room temperature
- ionic liquid
- solid state
- reduced graphene oxide
- single molecule
- sensitive detection
- body mass index
- high resolution
- molecular dynamics simulations
- quantum dots
- human health
- mass spectrometry
- atomic force microscopy
- risk assessment
- living cells
- health risk
- physical activity
- molecularly imprinted
- health risk assessment
- carbon nanotubes