Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices.

A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlO x and CeO x layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation. The excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD) of the synaptic devices were realized for the short-term memory behaviors. The IGZO-based three-terminal synaptic transistor could thus be controlled appropriately by the amplitude, width, and interval time of the pulses for implementing the neuromorphic systems.