Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide.
Slavomír NemšákMathias GehlmannCheng-Tai KuoShih-Chieh LinChristoph SchlueterEwa MlynczakTien-Lin LeeLukasz PlucinskiHubert EbertIgor Di MarcoJán MinárClaus Michael SchneiderCharles S FadleyPublished in: Nature communications (2018)
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.
Keyphrases
- room temperature
- transition metal
- ionic liquid
- high resolution
- molecularly imprinted
- quantum dots
- climate change
- computed tomography
- dual energy
- magnetic resonance imaging
- metal organic framework
- single molecule
- optical coherence tomography
- machine learning
- mass spectrometry
- big data
- solid state
- simultaneous determination
- solid phase extraction