Low-Energy-Consumption Three-Valued Memory Device Inspired by Solid-State Batteries.
Yuki WatanabeShigeru KobayashiIssei SugiyamaKazunori NishioWei LiuSatoshi WatanabeRyota ShimizuTaro HitosugiPublished in: ACS applied materials & interfaces (2019)
We report the creation of a low-energy-consumption three-valued memory device based on the switching of open-circuit voltages. This device consists of a stack of Li, Li3PO4 solid electrolyte, and Ni electrode films. We observed reversible voltage switching between high, intermediate, and low open-circuit voltages. According to the scaling law, the energy required to switch a device is estimated to be 8.8 × 10-11 J/μm2 and this value is almost 1/50 of that of a typical dynamic random access memory. Both the high- and low-voltage states converged to the intermediate-voltage state, indicating that the intermediate-voltage state is the most stable metastable state.