Enhanced Performance of Cyclopentadithiophene-Based Donor-Acceptor-Type Semiconducting Copolymer Transistors Obtained by a Wire Bar-Coating Method.

Herein, we report the fabrications of high-performance polymer field-effect transistors (PFETs) with wire bar-coated semiconducting polymer film as an active layer. For an active semiconducting material of the PFETs, we employed cyclopentadithiophene- alt -benzothiadiazole (CDT-BTZ) that is a D-A-type-conjugated copolymer consisting of a repeated electron-donating unit and an electron-accepting unit, and the other two CDT-based D-A-type copolymer analogues are cyclopentadithiophene- alt -fluorinated-benzothiadiazole (CDT-FBTZ) and cyclopentadithiophene- alt -thiadiazolopyridine (CDT-PTZ). The linear field-effect mobility values obtained from the transfer curve of the PFETs fabricated with the spin-coating were 0.04 cm 2 /Vs, 0.16 cm 2 /Vs, and 0.31 cm 2 /Vs, for CDT-BTZ, CDT-FBTZ, and CDT-PTZ, respectively, while the mobility values measured from the PFETs with the wire bar-coated CDT-BTZ film, CDT-FBTZ film, and CDT-PTZ film were 0.16 cm 2 /Vs, 0.28 cm 2 /Vs, and 0.95 cm 2 /Vs, respectively, which are about 2 to 4 times higher values than those of the PFETs with spin-coated films. These results revealed that the aligned molecular chain is beneficial for the D-A-type semiconducting copolymer even though the charge transport in the D-A-type semiconducting copolymer is known to be less critical to the degree of disorder in film.