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Charge-transfer contacts for the measurement of correlated states in high-mobility WSe 2 .

Jordan PackYinjie GuoZiyu LiuBjarke S JessenLuke N HoltzmanSong LiuMatthew CothrineKenji WatanabeTakashi TaniguchiDavid G MandrusKatayun BarmakJames C HoneCory R Dean
Published in: Nature nanotechnology (2024)
Two-dimensional semiconductors, such as transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for two-dimensional semiconductors that utilizes a charge-transfer layer to achieve large hole doping in the contact region, and implement this technique to measure the magnetotransport properties of high-purity monolayer WSe 2 . We measure a record-high hole mobility of 80,000 cm 2  V -1  s -1 and access channel carrier densities as low as 1.6 × 10 11  cm -2 , an order of magnitude lower than previously achievable. Our ability to realize transparent contact to high-mobility devices at low density enables transport measurements of correlation-driven quantum phases including the observation of a low-temperature metal-insulator transition in a density and temperature regime where Wigner crystal formation is expected and the observation of the fractional quantum Hall effect under large magnetic fields. The charge-transfer contact scheme enables the discovery and manipulation of new quantum phenomena in two-dimensional semiconductors and their heterostructures.
Keyphrases
  • molecular dynamics
  • energy transfer
  • transition metal
  • monte carlo
  • small molecule
  • machine learning
  • big data
  • mass spectrometry
  • molecularly imprinted
  • deep learning
  • human health
  • artificial intelligence
  • light emitting