Substitutional P-type Doping in NbS 2 -MoS 2 Lateral Heterostructures Grown by MOCVD.

Monolayer MoS 2 has attracted significant attention owing to its excellent performance as a n-type semiconductor from the TMDC family. It is however strongly desired to develop controllable synthesis methods for 2D p-type MoS 2 , which is crucial for complementary logic applications but remains difficult. In this work, we synthesize high-quality NbS 2 -MoS 2 lateral heterostructures by one-step MOCVD together with monolayer MoS 2 substitutionally doped by Nb, resulting in a p-type doped behavior. The heterojunction shows a p-type transfer characteristic with a high on/off current ratio of around 10 4 , exceeding previously reported values. The band structure through the NbS 2 -MoS 2 heterojunction is investigated by DFT and quantum transport simulations. Our work provides a scalable approach to synthesize substitutionally doped TMDC materials and provides an insight into the interface between 2D metals and semiconductors in lateral heterostructures, which is imperative for the development of next-generation nanoelectronics and highly integrated devices. This article is protected by copyright. All rights reserved.