Spin Quantum dot Light-Emitting Diodes Enabled by Two-Dimensional Chiral Perovskite with Spin-Dependent Carrier Transport.

Chiral-induced spin selectivity (CISS) effect provides innovative approach to spintronics and quantum-based devices for chiral materials. Different from the conventional ferromagnetic devices, the application of CISS effect is potential to operate under room temperature and zero applied magnetic field. Low dimensional chiral perovskites by introducing chiral amines are beginning to show significant CISS effect for spin injection, but research on chiral perovskites is still in its infancy, especially on spin-light emitting diode (spin-LED) construction. Here we report the spin-QLEDs enabled by two-dimensional (2D) chiral perovskites as CISS layer for spin-dependent carrier injection and CdSe/ZnS quantum dots (QDs) as light emitting layer. The regulation pattern of the chirality and thickness of chiral perovskites, which affects the circularly polarized electroluminescence (CP-EL) emission of spin-QLED, has been discovered. Notably, the spin injection polarization of 2D chiral perovskites is higher than 80% and the CP-EL asymmetric factor (g CP-EL ) achieves up to 1.6 × 10 -2 . Consequently, this work opens up a new and effective approach for high-performance spin-LEDs. This article is protected by copyright. All rights reserved.