Towards large scale integration of MoS 2 /graphene heterostructure with ALD-grown MoS 2 .

In the pursuit of ultrathin and highly sensitive photodetectors, a promising approach involves leveraging the combination of light-sensitive two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMD), such as MoS 2 and the high electrical conductivity of graphene. Over the past decade, exfoliated 2D materials and electron-beam lithography have been used extensively to demonstrate feasibility on single devices. But for these devices to be used in the real-world systems, it is necessary to demonstrate good device performance similar to lab-based devices with repeatability of the results from device to device and a path to large scale manufacturing. To work in this way, a fabrication process of MoS 2 /graphene vertical heterostructures with a wafer-scale integration in a CMOS compatible foundry environment is evaluated here. Large-scale Atomic Layer Deposition (ALD) on 8-inch silicon wafers is used for the growth of MoS 2 layers which are then transferred on a 4-inch graphene-based wafer. The MoS 2 /graphene phototransistors are fabricated collectively, achieving a minimum channel length of 10 µm. The results measured on dozen of devices demonstrate a photoresponsivity of 50 A/W and a remarkable sensitivity as low as 10 nW at 660 nm. These results not only compete with lab-based photodetectors made of chemical vapor deposition (CVD) grown MoS 2 layers transferred on graphene, but also pave the way for the large-scale integration of these emerging 2D heterostructures in optoelectronic devices and sensors.