Performance improvement of Hf0.45Zr0.55Ox ferroelectric field effect transistor memory with ultrathin Al-O bonds-modified InOx channels.

Ferroelectric field effect transistor (FeFET) memories with hafnium zirconium oxide (HZO) ferroelectric gate dielectric and ultrathin InOx channel exhibit promising applicability in monolithic 3-dimensional (M3D) integrated chips. However, the inferior stability of the devices severely limits their applications. In this work, we studied the effect of single cycle of atomic-layer-deposited Al-O bonds repeatedly embedded into an ultrathin InOx channel (~2.8 nm) on the Hf0.45Zr0.55O2 FeFET memory performance. Compared to the pure InOx channel, three cycles of Al-O bonds modified InOx channel (IAO-3) generates a much larger memory window (i.e., drain current ratio between the programmed and erased devices) under the same program conditions (+5.5 V/500 ns), especially after post-annealing at 325 ℃ for 180 s in O2.