Controllable Chemical Vapor Deposition Growth of High-Mobility Bi 2 O 2 Te Nanosheets.

Air-stable bismuth oxychalcogenides (Bi 2 O 2 X) have exhibited exceptional electrical properties and ultrahigh mobility in high-performance electronic devices. However, although Bi 2 O 2 Se is commonly used, there have been few reported uses of Bi 2 O 2 Te because of its challenging preparation process. This study aimed to synthesize two-dimensional Bi 2 O 2 Te nanosheets using the chemical vapor deposition method. Bi 2 O 2 Te nanosheets with different thicknesses were obtained by adjusting the growth conditions, such as temperature. The as-prepared Bi 2 O 2 Te single crystal exhibited a Hall mobility of 496 cm 2 V -1 s -1 at 300 K, which reached 5000 cm 2 V -1 s -1 at 2 K. The results expand the Bi 2 O 2 X family and show Bi 2 O 2 Te to be a promising candidate for use in highly efficient electronic devices.