Low-Frequency Noise Characteristics in HfO 2 -Based Metal-Ferroelectric-Metal Capacitors.

The transport mechanism of HfO 2 -based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current-voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole-Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities ( S I ) obtained from the LFN measurements followed 1/ f noise shapes and exhibited a constant electric field ( E ) × S I / I 2 noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry.