Improved Thermoelectric Performance of P-type SnTe through Synergistic Engineering of Electronic and Phonon Transports.

SnTe has been regarded as a potential alternative to PbTe in thermoelectrics because of its environmentally friendly features. However, it is a challenge to optimize its thermoelectric (TE) performance as it has an inherent high hole concentration ( n H ∼2 × 10 20 cm -3 ) and low mobility (μ H ∼18 cm 2 V -1 s -1 ) at room temperature (RT), arising from a high intrinsic Sn vacancy concentration and large energy separation between its light and heavy valence bands. Therefore, its TE figure of merit is only 0.38 at ∼900 K. Herein, both the electronic and phonon transports of SnTe were engineered by alloying species Ag 0.5 Bi 0.5 Se and ZnO in succession, thus increasing the Seebeck coefficient and, at the same time, reducing the thermal conductivity. As a result, the TE performance improves significantly with the peak ZT value of ∼1.2 at ∼870 K for the sample (SnGe 0.03 Te) 0.9 (Ag 0.5 Bi 0.5 Se) 0.1 + 1.0 wt % ZnO. This result proves that synergistic engineering of the electronic and phonon transports in SnTe is a good approach to improve its TE performance.