Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation.

In this study, indium-tin-zinc-oxide (ITZO) and Zn doped In 2 O 3 nanowires were directly grown as bridged nanowires between two heavily doped silicon (Si) electrodes on an SOI wafer using single step vapor-solid-solid (VSS) growth method. SEM analysis showed highly dense and self aligned nanowire formation between the Si electrodes. Electrical and UV response measurements were performed in ambient condition. Current-voltage characteristics of devices exhibited both linear and non-linear behavior. This was the first demonstration of bridged ITZO and Zn-doped In 2 O 3 nanowires. Our results show that bridged nanowire growth technique can be a potential candidate for high performance electronic and optoelectronic devices.