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Manipulating Dirac States in BaNiS 2 by Surface Charge Doping.

Jiuxiang ZhangThibault Daniel Pierre SohierMichele CasulaZhesheng ChenJonathan CaillauxEvangelos PapalazarouLuca PerfettiLuca PetacciaAzzedine BendounanAmina Taleb-IbrahimiDavid Santos-CottinYannick KleinAndrea GauzziMarino Marsi
Published in: Nano letters (2023)
In the Dirac semimetal BaNiS 2 , the Dirac nodes are located along the Γ-M symmetry line of the Brillouin zone, instead of being pinned at fixed high-symmetry points. We take advantage of this peculiar feature to demonstrate the possibility of moving the Dirac bands along the Γ-M symmetry line in reciprocal space by varying the concentration of K atoms adsorbed onto the surface of cleaved BaNiS 2 single crystals. By means of first-principles calculations, we give a full account of this observation by considering the effect of the electrons donated by the K atom on the charge transfer gap, which establishes a promising tool for engineering Dirac states at surfaces, interfaces, and heterostructures.
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