Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates.

Artur Tuktamyshev Stefano Vichi Federico Guido CesuraAlexey FedorovGiuseppe CarminatiDavide LambardiJacopo Pedrini Elisa Vitiello Fabio Pezzoli Sergio Bietti Stefano Sanguinetti

Published in: Nanomaterials (Basel, Switzerland) (2022)

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.

Keyphrases

quantum dots
sensitive detection
energy transfer
molecular dynamics
density functional theory
single cell
mass spectrometry
solid state
monte carlo
structural basis