GaAs nanowires (NWs) have wide application potential as near-infrared optical devices and the high-pressure strategy has been applied to modulatetheir crystal and electronic structures. As another typical thermodynamic parameter, temperature can also affect the optical performance of semiconductors. Here we report the excitation-wavelength-dependent photoluminescence in GaAs nanowires under high-pressure conditions. The pressure for achieving the maximum photoluminescence (PL) intensity and bandgap transition from direct to indirect of GaAs NWs varies (1.7-2.5 GPa) with the wavelength of the incident lasers (473-633 nm). The Raman peak of GaAs NWs shifts towards higher frequency with increasing excitation wavelengths at the same high-pressure conditions, revealing the stronger heating effect induced by incident laser with the shorter wavelength. The relative temperature difference in GaAs NWs induced by two different lasers can be estimated up to 537.5 K, and the strong heating effect suppresses the light-emission efficiency in GaAs NWs. With increasing the pressure, the relative temperature difference presents a gradual declining trend and PL intensity presents an opposite trend, which relates to the pressure-induced suppression of nonradiative recombination in GaAs NWs. Our study -provides insights into the mechanisms for the excitation-wavelength dependent photoluminescence (EWDP) effect and an alternative route to modulate the high-pressure performance of nanodevices.
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