Light-Mediated Multilevel Flexible High-Efficiency Perovskite Resistive Switching Memory Based on Mn:CsPbCl 3 Nanocrystals.
Qian RanYuchan WangWenxia ZhangNannan XuWeiwei ChenXiaosheng TangPublished in: The journal of physical chemistry letters (2024)
Herein, the electrical characteristics, photoelectric properties, resistive switching (RS) mechanism, and flexible storage application of Ag/PMMA&Mn:CsPbCl 3 /ITO (PMMA = poly(methyl methacrylate)) devices are studied by using the photoelectric material Mn:CsPbCl 3 nanocrystals (NCs) embedded in PMMA as the RS layer. The devices exhibit bipolar RS behavior with low operating voltage, excellent cycling endurance (>1000 times), long retention time (≥10 4 s), high ON/OFF ratio (≈10 4 ), and good environmental stability. The flexible memory devices have demonstrated reliable mechanical stability of consecutive 1000 bending cycles. In addition, multilevel data storage is realized by introducing the UV light, and the adjustive resistive switching characteristics is achieved through photoelectric synergistic work. The resistive switching mechanism under the excitation of light has been studied comprehensively. This work may pave a new way for developing the next generation of high-density data storage and photoelectric memristor.
Keyphrases
- room temperature
- high efficiency
- high density
- electronic health record
- energy transfer
- solid state
- working memory
- high intensity
- transition metal
- ionic liquid
- skeletal muscle
- bipolar disorder
- metal organic framework
- quantum dots
- risk assessment
- resistance training
- body composition
- human health
- cancer therapy
- climate change
- drug delivery
- deep learning
- life cycle