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Spin Hall Magnetoresistance Effect from a Disordered Interface.

Sara CatalanoJuan M Gomez-PerezM Xochitl Aguilar-PujolAndrey ChuvilinMarco GobbiLuis E HuesoFèlix Casanova
Published in: ACS applied materials & interfaces (2022)
The spin Hall magnetoresistance (SMR) emerged as a reference tool to investigate the magnetic properties of materials with an all-electrical setup. Its sensitivity to the magnetization of thin films and surfaces may turn it into a valuable technique to characterize van der Waals magnetic materials, which support long-range magnetic order in atomically thin layers. However, realistic surfaces can be affected by defects and disorder, which may result in unexpected artifacts in the SMR, rather than the sole appearance of electrical noise. Here, we study the SMR response of heterostructures combining a platinum (Pt) thin film with the van der Waals antiferromagnet MnPSe 3 and observe a robust SMR-like signal, which turns out to originate from the presence of strong interfacial disorder in the system. We use transmission electron microscopy (TEM) to characterize the interface between MnPSe 3 and Pt, revealing the formation of a few nanometer-thick platinum-chalcogen amorphous layer. The analysis of the transport and TEM measurements suggests that the signal arises from a disordered magnetic system formed at the Pt/MnPSe 3 interface, washing out the interaction between the spins of the Pt electrons and the MnPSe 3 magnetic lattice. Our results show that the damaged interfaces can yield an important contribution to SMR, questioning a widespread assumption on the role of disorder in such measurements.
Keyphrases
  • molecularly imprinted
  • room temperature
  • electron microscopy
  • single molecule
  • density functional theory
  • magnetic resonance