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Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces.

Takafumi IshibeYoshiki MaedaTsukasa TeradaNobuyasu NaruseYutaka MeraEiichi KobayashiYoshiaki Nakamura
Published in: Science and technology of advanced materials (2020)
For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe3O4 nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature growth. The Fe3O4 nanocrystals on Ge nuclei had a well-controlled interface (Fe3O4/GeOx/Ge) composed of high-crystallinity Fe3O4 and high-quality GeOx layers. The nanocrystals showed uniform resistive switching characteristics (high switching probability of ~90%) and relatively high Off/On resistance ratio (~58). The high-quality interface enables electric field application to Fe3O4 and GeOx near the interface, which leads to effective positively charged oxygen vacancy movement, resulting in high-performance resistive switching. Furthermore, we successfully observed memory effect in nanocrystals with well-controlled interface. The experimental confirmation of the memory effect existence even in ultrasmall nanocrystals is significant for realizing non-volatile nanocrystal memory leading to neuromorphic devices.
Keyphrases
  • room temperature
  • working memory
  • energy transfer
  • high density
  • ionic liquid
  • high resolution
  • mass spectrometry