Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors.

In this study, molecular beam epitaxially grown axially configured ensemble GaAsSb/GaAs separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche photodetector device on non-patterned Si substrate is presented. Our device exhibits a low breakdown voltage ( V BR ) of ∼ -10 ± 2.5 V under dark, photocurrent gain ( M ) varying from 20 in linear mode to avalanche gain of 700 at V BR at a 1.064 μm wavelength. Positive temperature dependence of breakdown voltage ∼ 12.6 mV K -1 further affirms avalanche breakdown as the gain mechanism in our SACM NW APDs. Capacitance-voltage ( C - V ) and temperature-dependent noise characteristics also validated punch-through voltage ascertained from I - V measurements, and avalanche being the dominant gain mechanism in the APDs. The ensemble SACM NW APD device demonstrated a broad spectral room temperature response with a cut-off wavelength of ∼1.2 μm with a responsivity of ∼0.17-0.38 A W -1 at -3 V. This work offers a potential pathway toward realizing tunable nanowire-based avalanche photodetectors compatible with traditional Si technology.