Low-power multilevel resistive switching in β- Ga 2 O 3 based RRAM devices.

In this study, multilevel switching at low-power in Ti/TiN/Ga 2 O 3 /Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages of ∼1.1 V with a maximum R off / R on ratio of ∼10 3 . Moreover, to the best of our knowledge, the multi-bit storage capability of these RRAM devices with a reasonably high R off / R on ratio is experimentally demonstrated, for the first time, for lower compliance currents at 10 μ A, 20 μ A and 50 μ A. The multi-bit resistive switching behavior of the Ga 2 O 3 RRAM device at a low compliance current paves the way for low-power and high-density data storage applications.