Highly transparent light emitting diodes on graphene encapsulated Cu nanowires network.

The internal quantum efficiency of blue LEDs is almost close to the limit, therefore, advanced transparent electrode has been long explored for gaining high external quantum efficiency. However, work function mismatch at electrode-semiconductor interface remains the fundamental difficulty in obtaining low resistance ohmic contact. Here, we demonstrate the gas phase encapsulation of graphene layer on superfine Cu nanowires network by chemical vapor deposition for highly transparent LEDs. The fast encapsulation of graphene shell layer on Cu nanowires achieves high optoelectronic performance (33 Ω/sq @ 95% T), broad transparency range (200~3000 nm) and strong antioxidant stability. A novel phenomenon of scattered-point contact is revealed at the Cu nanowires/GaN interface. Point discharge effect is found to produce locally high injection current through contact points, which can effectively overcome Schottky barrier and form ohmic contact. The transparent LED on Cu@graphene nanowire network is successfully lighted with bright blue emission.