P-N Heterojunction formation: Metal Sulfide@Metal Oxide Chemiresistor for ppb H 2 S Detection from Exhaled Breath and Food Spoilage at Flexible Room Temperature.

The development of a portable, low-cost sensor capable of accurately detecting H 2 S gas in exhaled human breath at room temperature is highly anticipated in the fields of human health assessment and food spoilage evaluation. However, achieving outstanding gas sensing performance and applicability for flexible room-temperature operation with parts per billion H 2 S gas sensors still poses technical challenges. To address this issue, this study involves the in situ growth of MoS 2 nanosheets on the surface of In 2 O 3 fibers to construct a p-n heterojunction. The In 2 O 3 @MoS 2 -2 sensor exhibits a high response of 460.61 to 50 ppm of H 2 S gas at room temperature, which is 19.5 times higher than that of the pure In 2 O 3 sensor and 322.1 times higher than that of pure MoS 2 . The In 2 O 3 @MoS 2 -2 also demonstrates a minimum detection limit of 3 ppb and maintains a stable response to H 2 S gas even after being bent 50 times at a 60° angle. These exceptional gas sensing properties are attributed to the increase in oxygen vacancies and chemisorbed oxygen on In 2 O 3 @MoS 2 -2 nanofibers as well as the formation of the p-n heterojunction, which modulates the heterojunction barrier. Furthermore, in this study, we successfully applied the In 2 O 3 @MoS 2 -2 sensor for oral disease and detection of food spoilage conditions, thereby providing new design insights for the development of portable exhaled gas sensors and gas sensors for evaluating food spoilage conditions at room temperature.